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Enabling High-Performance 5G Radio Access Networks
Explore semiconductor solutions for 5G base stations, including power conversion, VRMs, signal conditioning, sensing, and protection to enable higher data rates, wider coverage, and lower latency.
Efficient Power Solutions for Wireless Infrastructure
Base stations are the foundation of 5G and future 6G wireless networks, enabling high-speed connectivity, low latency, and reliable communications for mobile broadband, industrial IoT, private networks, and AI-driven applications. As network traffic continues to grow, operators are deploying macro base stations, massive MIMO systems, and small cells to increase capacity, expand coverage, and improve spectral efficiency.
Modern base stations rely on high-efficiency –48 V power architectures and advanced power conversion technologies to meet rising performance and energy-efficiency demands. Wide-bandgap semiconductors, including SiC MOSFETs, SiC Cascode JFETs, and GaN power devices, enable higher power density, lower losses, improved thermal performance, and reduced operating costs. These technologies support next-generation power supplies, RF systems, and distributed network deployments.
A typical base station integrates AC-DC power supplies, baseband units (BBUs), remote radio units (RRUs), active antenna units (AAUs), RF front ends, timing circuits, and PoL power solutions. As networks evolve toward Open RAN and cloud-based architectures, semiconductor solutions for efficient power delivery, precision sensing, protection, and synchronization are becoming essential to ensure scalable, reliable, and future-ready telecom infrastructure.
High‑Efficiency GaN Portfolio for Modern Power Systems
GaNEXUS™ is onsemi GaN power portfolio, designed to deliver higher efficiency, greater power density, and fast switching performance across modern power architectures.
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Advanced LV/MV MOSFETs for Base Station Power Systems
High-efficiency LV/MV MOSFETs for telecom base stations, delivering low conduction losses, fast switching, and reliable power conversion for 5G infrastructure.
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High-Precision Current Sensing for 5G Base Stations
Accurate current measurement for telecom base stations, enabling real-time power monitoring, protection, and optimized system performance.
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产品
Low/Medium Voltage MOSFETs
Portfolio of comprehensive range of Low-medium voltage power Mosfets that delivers superior performance and reliability for switching applications. Our cutting-edge PowerTrench® T10 technology delivers industry leading RDS, higher power density, reduced switching losses and better thermal performance.
Silicon Carbide (SiC) MOSFETs
Our SiC MOSFETs are designed to be fast and rugged and include system benefits from high efficiency to reduced system size and cost. MOSFETs are metal–oxide–semiconductor field-effect transistors with insulated gates. These silicon carbide MOSFETs have a higher blocking voltage and higher thermal conductivity than silicon MOSFETs, despite having similar design elements. SiC power devices also have a lower state resistance and 10 times the breakdown strength of regular silicon. In general, Systems with SiC MOSFETs have better performance and increased efficiency when compared to MOSFETs made with silicon material.
There are many advantages to choosing SiC MOSFETs over silicon MOSFETs, such as higher switching frequencies. High-temperature development is also not a concern when using SiC MOSFET modules because these devices can operate efficiently even in high heat. Additionally, with SiC MOSFETs, you benefit from a more compact product size because all components (inductors, filters, etc.) are smaller.
Silicon Carbide (SiC) Cascode JFETs
Our high-performance SiC Cascode JFETs utilize a unique cascode configuration, integrating a high-performance SiC fast JFET with a cascode-optimized Si-MOSFET.
Gallium Nitride (GaN) FETs
GaNEXUSTM Gallium Nitride (GaN) FETs are enhancement‑mode discrete GaN HEMTs that leverage wide‑bandgap material properties to deliver fast switching, low gate and output charge, and superior efficiency compared to silicon power transistors. These characteristics enable higher operating frequencies, reduced magnetics, and increased power density across low/medium, high and ultra-high voltage power conversion applications.
Gallium Nitride (GaN) Integrated Power
GaNEXUSTM Integrated Power includes GaNEXUS Drive, GaNEXUS Smart, and GaNEXUS Control, where each combines a GaN switch together with potential combination of additional features: gate driver, current sensing, protection, and control, in a single device to simplify design, reduce parasitics, and accelerate time to market.
AC-DC Power Conversion
Offline AC-DC controllers and regulators, and power factor and secondary side controllers that enable high active mode efficiency, low standby mode consumption and power factor correction.
Controllers
NCP81233
Multi-Phase Controller, Configurable, 4.5 V to 20 V, I2C
DC-DC Power Conversion
A product portfolio for DC-DC charge pumps, controllers, converters, and regulators.
Integrated Driver & MOSFET
Devices that combine driver IC with power MOSFETs and are optimized for DC-DC buck power conversion applications.
Current Sense Amplifiers
Current sensing requires accurate measurements and onsemi’s current sense amplifiers offer high degree of precision current sensing along with the advantages of wide input common mode range, bidirectional current sensing and high/low side current sensing.
LDO & Voltage Regulators
A portfolio that provides optimum solution for low power, space conscious and low noise designs.
Documents
White Papers
AI 数据中心和电信应用的电源技术对比
Tutorial
GaN Power Architectures Guide
Application Notes
Inside Elite Pairing Studio
Application Notes
Using Cascode SiC JFETs in LLC Primary
Collateral Brochure
工业级 LDO 选型指南
White Papers
High Performance, Precision Analog Capability Enabled by the Treo Platform
Application Notes
How to Achieve 99.3% Efficiency in 3.6 kW Totem-pole PFC Using 750 V Gen 4 SiC Cascode JFETs
White Papers
onsemi EliteSiC M3S Technology for High-Speed Switching Applications
评估板/套件
Evaluation Board
NCP1681CCM1KWGEVB
CCM Totem pole PFC 1000 W design with Gate driver integrated GaNFETs
Evaluation Board
EVBUM2901G-EVB
Evaluation Board for Double Pulse Testing discrete solutions
Evaluation Kit
NCP81295GEVB
NCP81295GEVB Hot Swap Smart Fuse Evaluation Board
Evaluation Board
NCP3286GEVB
Evaluation board to support NCP3286. 40A Stackable Fixed Frequency Buck Regulator. DGSCOMEVB USB dongle for PMBUS functionality sold separately
Base Stations
AI Data Center System Solution Guide
Explore AI data center power solutions for high-density server racks, 48 V & 800 V HVDC architectures, AC-DC/DC-DC, IBC & PoL power delivery using SiC, GaN, MOSFETs and smart power devices.
Base Stations
Elite Pairing Studio: Smarter Pairing Through Intelligence
An industry first web tool that intelligently recommends the optimal pairing of our EliteSiC MOSFETs, and gate drivers, delivering decisions 10× faster by evaluating all gate drivers in seconds.
常见问题解答
GaN technology enables high-frequency switching, compact power conversion, and improved efficiency. By reducing magnetics size and system footprint, GaN supports higher power density and simplified integration. It is well suited for DC-DC conversion, high-density power supplies, and next-generation telecom platforms where thermal management, scalability, and reduced system size are critical design objectives.
SiC devices reduce switching and conduction losses while supporting higher switching frequencies and improved thermal performance. They are particularly effective in high-voltage AC-DC conversion, PFC, and intermediate bus stages. These characteristics help engineers achieve higher power density, improved energy efficiency, lower cooling requirements, and enhanced reliability in multi-kW telecom power systems.
Future base station designs are being driven by AI-enabled applications, massive IoT deployments, cloud services, industrial automation, and increasing mobile data traffic. These trends are accelerating adoption of massive MIMO, higher-power radio architectures, WBG semiconductors, higher-efficiency power supplies, advanced thermal management, and scalable power delivery systems that support both 5G and future 6G infrastructure.
Massive MIMO systems increase network capacity through large antenna arrays and beamforming techniques, but they significantly increase power consumption, thermal density, and synchronization requirements. Engineers must optimize RF power delivery, thermal management, timing accuracy, and power conversion efficiency while maintaining reliable operation across many transmit and receive channels in outdoor deployment environments.
Advanced 5G features such as beamforming, carrier aggregation, coordinated multipoint transmission, and Time Division Duplex operation require highly accurate synchronization between baseband and radio systems. Technologies such as IEEE 1588v2 Precision Time Protocol (PTP) and SyncE help achieve sub-microsecond timing alignment, improving network reliability, spectral efficiency, mobility performance, and support for emerging private wireless and industrial applications.
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