电信
用于电信电源方案的可靠网络基建
凭借智能供电、保护和互联技术，加速5G及电信基础设施建设，从而提升效率、可靠性和网络运行时间。
为互联世界打造电信网路
电信是现代数字连接的基础，支持通过有线和无线网络实现语音、视频、数据以及机器间的通信传输。从5G基础设施和光纤宽带，到云通信、卫星网络和物联网IoT生态系统，电信技术为消费者、企业、政府及工业应用提供了实时信息交换的支持。 随着对网络更高带宽、更低延迟和更高可靠性的需求的持续增长，电信运营商正投资于先进的网络架构、边缘计算、网络虚拟化和人工智能驱动的运营，提供无缝、安全且可扩展的连接。
电信行业在全球网络中连接人员、设备、应用程序和服务，在数字化转型中发挥着至关重要的作用。5G-Advanced、私有无线网络、人工智能和智能网络自动化等新兴技术正在加速智能城市、医疗保健、交通运输、制造业和云计算等领域的创新。 现代电信解决方案能够提升运营效率、增强网络安全、提高数据可用性，并支持下一代应用网络要求，保证高速、可靠、永远在线，满足了通信基础设施对韧性的需求。电信正成为互联经济和未来数字生态系统的重要推动力。
Sub-Solutions
产品系列
Silicon Carbide (SiC) MOSFETs
Our SiC MOSFETs are designed to be fast and rugged and include system benefits from high efficiency to reduced system size and cost. MOSFETs are metal–oxide–semiconductor field-effect transistors with insulated gates. These silicon carbide MOSFETs have a higher blocking voltage and higher thermal conductivity than silicon MOSFETs, despite having similar design elements. SiC power devices also have a lower state resistance and 10 times the breakdown strength of regular silicon. In general, Systems with SiC MOSFETs have better performance and increased efficiency when compared to MOSFETs made with silicon material.
There are many advantages to choosing SiC MOSFETs over silicon MOSFETs, such as higher switching frequencies. High-temperature development is also not a concern when using SiC MOSFET modules because these devices can operate efficiently even in high heat. Additionally, with SiC MOSFETs, you benefit from a more compact product size because all components (inductors, filters, etc.) are smaller.
Silicon Carbide (SiC) Cascode JFETs
Our high-performance SiC Cascode JFETs utilize a unique cascode configuration, integrating a high-performance SiC fast JFET with a cascode-optimized Si-MOSFET.
Gallium Nitride (GaN) FETs
GaNEXUSTM Gallium Nitride (GaN) FETs are enhancement‑mode discrete GaN HEMTs that leverage wide‑bandgap material properties to deliver fast switching, low gate and output charge, and superior efficiency compared to silicon power transistors. These characteristics enable higher operating frequencies, reduced magnetics, and increased power density across low/medium, high and ultra-high voltage power conversion applications.
Gallium Nitride (GaN) Integrated Power
GaNEXUSTM Integrated Power includes GaNEXUS Drive, GaNEXUS Smart, and GaNEXUS Control, where each combines a GaN switch together with potential combination of additional features: gate driver, current sensing, protection, and control, in a single device to simplify design, reduce parasitics, and accelerate time to market.
AC-DC Power Conversion
Offline AC-DC controllers and regulators, and power factor and secondary side controllers that enable high active mode efficiency, low standby mode consumption and power factor correction.
DC-DC Power Conversion
A product portfolio for DC-DC charge pumps, controllers, converters, and regulators.
Standard Products
Standard Products provide reliable, cost‑effective semiconductor solutions for industrial, automotive and consumer designs. The portfolio includes LDOs, amplifiers, comparators, logic, EEPROMs and isolation devices, many built on the scalable Treo platform to deliver long‑term availability, consistent quality and faster time to market.
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