Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−4L

添加至我的收藏

概览

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • DC-DC Power
  • On Board Charger
  • EV/HEV
  • 1200V
  • High Junction Temperature
  • High UIS, Surge Current, and Avalanche
  • Qualified for Automotive

产品列表

如需购买产品或样品,请先登录您的安森美账号。

搜寻

Close Search

产品:

1

分享

Product Groups:

Orderable Parts:

1

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

Qg Total (nC)

Output Capacitance (pF)

Tj Max (°C)

Reference Price

NVH4L080N120SC1

Loading...

Active

CAD Model

Pb

A

H

P

TO-247-4

NA

0

TUBE

450

Y

M1

1200

29

80

56

80

175

$8.4714

More Details

Show More

1-25 of 25

Products per page

Jump to :