碳化硅 (SiC) MOSFET | NTH4LN012N065M3S

EliteSiC, 12 mohm, 650 V, M3S, TO247-4L, Thin Leads

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NTH4LN012N065M3S is a 12 mΩ SiC MOSFET with ultra low gate charge (135 nC QG(tot)). It is assembled in TO247-4L thin leads which is helpful to reduce PCB footprint and improve power density. 

  • SMPS, Solar Inverters, UPS, Energy Storage, EV Charging Infrastructure
  • Power Supply Unit, ESS, EVC
  • Typical RDS(ON) = 12 mΩ @ VGS = 18 V
  • Ultra Low Gate Charge (QG(tot) = 135 nC)
  • High Speed Switching with Low Capacitance (Coss = 281 pF)
  • 100% Avalanche Tested

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NTH4LN012N065M3S

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Pb

A

H

P

TO-247 4-LEAD, THIN LEADS

340CW

NA

0

TUBE

450

No

SiC MOSFET

650

102

12

135

281

175

Price N/A

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