碳化硅 (SiC) MOSFET | NVT2016N090M2

Silicon Carbide (SiC) MOSFET – EliteSiC, 16 mohm, 900 V, M2, T2PAK

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EliteSiC 900V M2 MOSFET provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.  The T2PAK allows heat to be drawn directly into the heatsink rather than being forced into the main circuit board.

  • Automotive On Board Charger (OBC)
  • DC/DC converters for EV/HEV
  • Automotive EV/HEV
  • New M3S technology: 23 mohm RDS(ON) with low Eon and Eoff losses
  • Qualified for automotive per AEC-Q101
  • 15V to 18V gate drive
  • T2PAK top cool package
  • Devices are Pb-free and RoHS compliant

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NVT2016N090M2

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CAD Model

Pb

A

H

P

T2PAK-7 11.80x14.00x3.50, 1.27P

763AC

1

245

REEL

800

No

M2

900

148

16

250

310

175

$12.9471

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