碳化硅 (SiC) MOSFET | NTH4LN040N120M3S

Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M3S, TO-247-4L Narrow lead

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Silicon Carbide (SiC) MOSFET new family, 1200V M3S planar EliteSiC MOSFET is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This EliteSiC family delivers optimum performance when driven with 18V gate drive but also works well with 15V gate drive.

  • Industrial
  • ESS / UPS
  • Solar
  • EV Charger
  • TO-247-4L Package with Kelvin source configuration
  • Excellent FOM [ = Rdson * Eoss ]
  • Ultra Low Gate Charge (QG(tot) = 75 nC)
  • High Speed Switching with Low Capacitance (Coss = 80 pF)
  • 15V to 18V Gate Drive
  • New M3S technology: 40 mohm RDS(ON) with low Eon and Eoff losses
  • 100% Avalanche Tested
  • Halide Free and RoHS Compliant

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NTH4LN040N120M3S

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TO-247 4-LEAD, THIN LEADS

340CW

NA

0

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450

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M3S

1200

54

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