Silicon Carbide (SiC) MOSFETs | NTH4L014N120M3P

碳化硅（SiC）MOSFET – EliteSiC系列，14 mohm，1200V，M3P，TO-247-4L封装

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概览

全新系列1200V M3P平面型SiC MOSFET，优化用于电源应用。平面工艺在负栅极驱动电压和栅极上的关断尖峰下都能够可靠运行。这一系列在用18V栅极驱动时能提供最佳性能，但同样适用15V栅极驱动。

  • AC-DC转换
  • DC-AC转换
  • DC-DC转换
  • UPS
  • 电动车充电桩
  • 光伏逆变器
  • 储能系统
  • 用于低共源电感的TO247-4LD封装
  • 15V至18V栅极驱动
  • 全新M3P技术：14mohm RDS(ON)，低EON和低EOFF损耗
  • 100%通过雪崩测试

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NTH4L014N120M3P

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Pb

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H

P

TO-247-4

340CJ

NA

0

TUBE

450

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M3P

1200

127

14

262

329

175

$19.6444

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