Silicon Carbide (SiC) MOSFETs | NTCR013N120M3S

Silicon Carbide (SiC) MOSFET – EliteSiC, 13 mohm, 1200 V, M3S, Die

量产中

相似产品推荐

数据表

购买

概览

The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive. 

  • Industrial
  • UPS / ESS
  • Solar
  • EV Charger
  • Excellent FOM [ = Rdson * Eoss ]
  • Ultra Low Gate Charge (QG(tot) = 254 nC)
  • High Speed Switching with Low Capacitance (Coss = 262 pF)
  • 15V to 18V Gate Drive
  • New M3S technology: 13 mohm RDS(ON) with low Eon and Eoff losses
  • 100% Avalanche Tested
  • Halide Free and RoHS Compliant
  • Die ( sawn on foil )

工具和资源

与NTCR013N120M3S相关的产品服务、工具和其他资源

CAD Model

CAD模型

物质成分

产品更改通知

产品参数及购买信息

搜寻

Close Search

产品:

1

分享

排序方式

产品系列:

┗

可订购器件:

1

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

Qg Total (nC)

Output Capacitance (pF)

Tj Max (°C)

参考价格

NTCR013N120M3S

联系销售

量产中

CAD Model

Pb

A

H

P

-

-

NA

0

MTFRM

1

No

M3S

1200

151

13

254

262

175

$20.4262

More Details

Show More

1-25 of 25

Products per page

Jump to :

1
contact sales icon

支持服务

联系安森美销售团队获得支持，查询或者对比产品细节。