AEC Q101 qualified Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop VII Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss offers optimum performance for both hard and soft switching topology in automotive application.
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AFGH4L25T120RWD
Active
Pb
A
H
P
TO-247-4
NA
0
TUBE
450
F
FS7
1200
25
1.38
1.71
~NA~
~NA~
130
22
113
6
~NA~
357
Yes
$4.5546
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