PCGA200T65NF8M1: IGBT 650 V, 200 A Field Stop Trench Gen3 (FS3) Bare Die with Solderable Top Metal. Pairing with PCRKA20065F8M1

具体说明: This 650V Field Stop Trench Gen3 (FS3) IGBT bare d...
  • This 650V Field Stop Trench Gen3 (FS3) IGBT bare die has a die size of 10mm x 10mm. Its emitter pads are covered with Ni/Ag solderable top metal, which enables advanced power module assembly technologies for emittering connection, including Ag Sintering and Cu bare soldering, etc.
  • 特性
  • AEC-Q101 Qualified - Pass 100% HTRB test which gives better reliability performance than parts passing older versioin AEC-Q101
  • Maximum Junction Temperature 175°C - More thermal margin than conventional 150°C rated bare die products
  • Positive Temperature Coefficient - Easy Paralleling
  • Very Low Saturation Voltage: VCE(SAT) = 1.53V (Typ.) @ IC = 200A
  • Short Circuit Rated
  • Final Solderable Metal Layer
  • 应用
  • Automotive Traction Modules
  • General Power Modules
  • 终端产品
  • xEV
  • 技术文档及设计资源
    供货情况和样品
    PCGA200T65NF8M1
  • 状况: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • 具体说明: IGBT 650 V, 200 A Field Stop Trench Gen3 (FS3) Bare Die with Solderable Top Metal. Pairing with PCRKA20065F8M1
  • 封装 类型: 
  • 封装 外形: 
  • MSL: NA
  • 容器 类型: MTFRM
  • 容器 数量: 1
  • Specifications
  • V(BR)CES Typ (V):  
  • IC Max (A):  
  • VCE(sat) Typ (V):  
  • VF Typ (V):  
  • Eoff Typ (mJ):  
  • Eon Typ (mJ):  
  • Trr Typ (ns):  
  • Irr Typ (A):  
  • Gate Charge Typ (nC):  
  • Short Circuit Withstand (µs):  
  • EAS Typ (mJ):  
  • PD Max (W):  
  • Co-Packaged Diode:  
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