NSBA124EF3: PNP Bipolar Digital Transistor (BRT)

具体说明: This series of digital transistors is designed to ...
  • This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
  • 特性
  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant
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    NSBA124EF3T5G
  • 状况: Active
  • Compliance: Pb-free Halide free 
  • 具体说明: PNP Bipolar Digital Transistor (BRT), 50 V, 100 mA, 22 k, 22 k
  • 封装 类型: SOT-1123-3
  • 封装 外形: 524AA
  • MSL: 1
  • 容器 类型: REEL
  • 容器 数量: 8000
  • 库存

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • ON Semiconductor:224,000
  • Specifications
  • Polarity: PNP 
  • IC Continuous (A): 0.1 
  • V(BR)CEO Min (V): 50 
  • hFE Min: 60 
  • R1 (kΩ): 22 
  • R2 (kΩ): 22 
  • R1/R2 Typ:
  • Vi(off) Max (V): 0.8 
  • Vi(on) Min (V): 2.5 
  • Package Type: SOT-1123-3 
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