NSBA123JDP6: Dual PNP Bipolar Digital Transistor (BRT)

具体说明: This series of digital transistors is designed to ...
  • This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
  • 特性
  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant
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    NSBA123JDP6T5G
  • 状况: Active
  • Compliance: Pb-free Halide free 
  • 具体说明: Dual PNP Bipolar Digital Transistor (BRT)
  • 封装 类型: SOT-963
  • 封装 外形: 527AD
  • MSL: 1
  • 容器 类型: REEL
  • 容器 数量: 8000
  • 库存

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • ON Semiconductor:136,000
  • Specifications
  • Polarity: Dual PNP 
  • IC Continuous (A): 0.1 
  • V(BR)CEO Min (V): 50 
  • hFE Min: 80 
  • R1 (kΩ): 2.2 
  • R2 (kΩ): 47 
  • R1/R2 Typ: 0.0468 
  • Vi(off) Max (V): 0.5 
  • Vi(on) Min (V): 1.1 
  • Package Type: SOT-963 
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