NCP349: Positive Overvoltage Protection Circuit with Internal Low Ron NMOS FET

具体说明: The NCP349 is able to disconnect the systems from ...
  • The NCP349 is able to disconnect the systems from its output pin in case wrong input operating conditions are detected. The system is positive overvoltage protected up to +28 V.
    Due to this device using internal NMOS, no external device is necesary, reducing the system cost and the PCB area of the application board.
    The NCP349 is able to instantaneously disconnect the output from the input, due to integrated Low Ron Power NMOS (65 mΩ, if the input voltage exceeds the overvoltage threshold (OVLO) or undervoltage threshold(UVLO).
    At powerup (EN(BAR) pin = low level), the Vout turns on ton after the Vin exceeds the undervoltage threshold.
    The NCP349 provides a negative going flag(FLAG(BAR)) output, which alerts the system that a fault has occurred.
    In addition, the device has ESD-protected input (15 kV Air) when bypassed with a 1.0 µF or larger capacitor.
  • 特性
  • Overvoltage Protection up to 28 V
  • On-Chip Low RDS(on) NMOS Transistor: 65 m
  • Overvoltage Lockout (OVLO)
  • Undervoltage Lockout (UVLO)
  • Internal Soft start
  • Alert FLAG(BAR) Output
  • Shutdown EN(BAR) Input
  • Compliance to IEC61000-4-2 (Level 4), 8.0 kV (Contact), and 15 kV (Air)
  • ESD Ratings: Machine Model = B, Human Body Model = 3
  • This is a Pb-Free Device
  • Package DFN 1.6 x 2.0 mm
  • 应用
  • Cell Phones, Camera Phones, Digital Still Cameras, PDA, and MP3 Players
  • 技术文档及设计资源
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    NCP349MNAETBG
  • 状况: Active
  • Compliance: Pb-free Halide free 
  • 具体说明: Positive Overvoltage Protection Circuit with Internal Low Ron NMOS FET, OVLO 5.68 V
  • 封装 类型: DFN-6
  • 封装 外形: 506BM
  • MSL: 1
  • 容器 类型: REEL
  • 容器 数量: 3000
  • 库存

  • Market Leadtime (weeks):4 to 8
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  • Digikey:>1K
  • Newark:<1K
  • PandS:>1K
  • NCP349MNBGTBG
  • 状况: Active
  • Compliance: Pb-free Halide free 
  • 具体说明: Positive Overvoltage Protection Circuit with Internal Low Ron NMOS FET, OVLO 6.02 V
  • 封装 类型: DFN-6
  • 封装 外形: 506BM
  • MSL: 1
  • 容器 类型: REEL
  • 容器 数量: 3000
  • 库存

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Digikey:>1K
  • NCP349MNBKTBG
  • 状况: Active
  • Compliance: Pb-free Halide free 
  • 具体说明: Positive Overvoltage Protection Circuit with Internal Low Ron NMOS FET, OVLO 6.4 V
  • 封装 类型: DFN-6
  • 封装 外形: 506BM
  • MSL: 1
  • 容器 类型: REEL
  • 容器 数量: 3000
  • 库存

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Digikey:>1K
  • NCP349MNTBG
  • 状况: Active
  • Compliance: Pb-free Halide free 
  • 具体说明: Positive Overvoltage Protection Circuit with Internal Low Ron NMOS FET, OVLO 6.85 V
  • 封装 类型: DFN-6
  • 封装 外形: 506BM
  • MSL: 1
  • 容器 类型: REEL
  • 容器 数量: 3000
  • 库存

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Digikey:>1K
  • ON Semiconductor:12,000
  • PandS:>1K
  • Specifications
  • VCC Min (V): 1.2 
  • VCC Max (V): 28 
  • P(AV) Max (W): 0.065 
  • VIT+ Typ (V): 5.68  6.02  6.4  6.85 
  • VIT Typ (V): 2.95  3.25 
  • IDDH Max (µA): 0.25 
  • TA Min (°C): -40 
  • TA Max (°C): 85 
  • Package Type: DFN-6 
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