MBRF20100CT: Schottky Power Rectifier, Switch-mode, 20 A, 100 V

具体说明: The Schottky Rectifier employs the Schottky Barrie...
  • The Schottky Rectifier employs the Schottky Barrier principle in a large metal to silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.
  • 特性
  • Highly Stable Oxide Passivated Junction
  • Very Low Forward Voltage Drop
  • Matched Dual Die Construction
  • High Junction Temperature Capability
  • High dv/dt Capability
  • Excellent Ability to Withstand Reverse Avalanche Energy Transients
  • Guardring for Stress Protection
  • Epoxy Meets UL94, VO at 1/8"
  • Electrically Isolated. No Isolation Hardware Required.
  • UL Recognized File #E69369 (Note 1.)

    Mechanical Characteristics:
  • Case: Epoxy, Molded
  • Weight: 1.9 grams (approximately)
  • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
  • Lead Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds
  • Marking: B20100
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    MBRF20100CTG
  • 状况: Active
  • Compliance: Pb-free 
  • 具体说明: Schottky Power Rectifier, Switch-mode, 20 A, 100 V
  • 封装 类型: TO-220-3 FullPak
  • 封装 外形: 221AH
  • MSL: NA
  • 容器 类型: TUBE
  • 容器 数量: 50
  • 库存

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Digikey:>1K
  • Newark:<1K
  • PandS:>1K
  • MBRF20100CT
  • 状况: Last Shipments
  • Compliance: 
  • 具体说明: Schottky Power Rectifier, Switch-mode, 20 A, 100 V
  • 封装 类型: TO-220-3 FullPak
  • 封装 外形: 221D-03
  • MSL: NA
  • 容器 类型: TUBE
  • 容器 数量: 50
  • 封装
    Specifications
  • Configuration: Common Cathode 
  • VRRM Min (V): 100 
  • VF Max (V): 0.95 
  • IRM Max (µA): 150 
  • IO(rec) Max (A): 20 
  • IFSM Max (A): 150 
  • trr Max (ns):
  • Cj Max (pF):
  • Package Type: TO-220-3 FullPak 
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