FQP19N20C: Power MOSFET, N-Channel, QFET®, 200 V, 19 A, 170 mΩ, TO-220

具体说明: This N-Channel enhancement mode power MOSFET is pr...
  • This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
  • 特性
  • 19A, 200V, RDS(on) = 170mΩ(Max.) @VGS = 10 V, ID = 9.5A
  • Low gate charge ( Typ. 40.5nC)
  • Low Crss ( Typ. 85pF)
  • 100% avalanche tested
  • 应用
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    FQP19N20C
  • 状况: Active
  • Compliance: Pb-free 
  • 具体说明: Power MOSFET, N-Channel, QFET®, 200 V, 19 A, 170 mΩ, TO-220
  • 封装 类型: TO-220-3
  • 封装 外形: 340AT
  • MSL: NA
  • 容器 类型: TUBE
  • 容器 数量: 1000
  • 库存

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Avnet:>1K
  • Digikey:>1K
  • Newark:<1K
  • ON Semiconductor:7,000
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 200 
  • VGS Max (V): ±30 
  • VGS(th) Max (V):
  • ID Max (A): 19 
  • PD Max (W): 139 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 170 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 40.5 
  • Ciss Typ (pF): 830 
  • Package Type: TO-220-3 
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