FGPF4565: IGBT, 650 V Field Stop Trench
具体说明: Using innovative field stop IGBT technology, Fairc...
Using innovative field stop IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for IPL (Intense Pulsed Light).
特性
High Current Capability
Low Saturation Voltage: VCE(sat) =1.5 V(Typ.) @ IC = 30 A
High Input Impedance
RoHS Compliant
供货情况和样品
FGPF4565
状况: Active
Compliance: Pb-free Halide free
具体说明: IGBT, 650 V Field Stop Trench
封装 类型: TO-220-3 FullPak
封装 外形: 221AT
MSL: NA
容器 类型: TUBE
容器 数量: 1000
库存
Market Leadtime (weeks):2 to 4
Arrow:0
ON Semiconductor:3,000
Specifications
V(BR)CES Typ (V):
650 
IC Max (A):
170 
VCE(sat) Typ (V):
1.5 
VF Typ (V):
- 
Eoff Typ (mJ):
- 
Eon Typ (mJ):
- 
Trr Typ (ns):
- 
Irr Typ (A):
- 
Gate Charge Typ (nC):
40.3 
Short Circuit Withstand (µs):
- 
EAS Typ (mJ):
- 
PD Max (W):
30 
Co-Packaged Diode:
No 
Package Type:
TO-220-3 FullPak