FGH75T65SQDTL4: IGBT, 650 V, 75 A Field Stop Trench

具体说明: Using novel field stop IGBT technology, ON semicon...
  • Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential
  • 特性
  • Maximum Junction Temperature: TJ = 175°C
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 75 A
  • 100% of the Parts tested for ILM(1)
  • High Input Impedance
  • Fast Switching
  • Tighten Parameter Distribution
  • RoHS Compliant
  • 技术文档及设计资源
    供货情况和样品
    FGH75T65SQDTL4
  • 状况: Active
  • Compliance: Pb-free Halide free 
  • 具体说明: IGBT, 650 V, 75 A Field Stop Trench
  • 封装 类型: TO-247-4
  • 封装 外形: 340CJ
  • MSL: NA
  • 容器 类型: TUBE
  • 容器 数量: 450
  • 库存

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Digikey:<1K
  • Specifications
  • V(BR)CES Typ (V): 650 
  • IC Max (A): 75 
  • VCE(sat) Typ (V): 1.6 
  • VF Typ (V): 1.8 
  • Eoff Typ (mJ): 0.266 
  • Eon Typ (mJ): 0.307 
  • Trr Typ (ns): 76 
  • Irr Typ (A):
  • Gate Charge Typ (nC): 128 
  • Short Circuit Withstand (µs):
  • EAS Typ (mJ):
  • PD Max (W): 375 
  • Co-Packaged Diode: Yes 
  • Package Type: TO-247-4 
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