FGH75T65SHDTLN4: IGBT, 650 V, 75 A Field Stop Trench

具体说明: Using novel field stop IGBT technology, Fairchild’...
  • Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
  • 特性
  • Maximum Junction Temperature: TJ =175°C
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 75 A
  • 100% of the Parts Tested for ILM(1)
  • High Input Impedance
  • Fast Switching
  • Tighten Parameter Distribution
  • RoHS Compliant
  • 应用
  • High performance Power converstion - inverter
  • High performance power conversion - PFC
  • 终端产品
  • UPS
  • Solar inverter
  • 技术文档及设计资源
    供货情况和样品
    FGH75T65SHDTLN4
  • 状况: Active
  • Compliance: Pb-free Halide free 
  • 具体说明: IGBT, 650 V, 75 A Field Stop Trench , 650 V, 75 A Field Stop Trench IGBT
  • 封装 类型: TO-247 4-LEAD, THIN LEADS
  • 封装 外形: 340CW
  • MSL: NA
  • 容器 类型: TUBE
  • 容器 数量: 450
  • Specifications
  • V(BR)CES Typ (V):  
  • IC Max (A):  
  • VCE(sat) Typ (V):  
  • VF Typ (V):  
  • Eoff Typ (mJ):  
  • Eon Typ (mJ):  
  • Trr Typ (ns):  
  • Irr Typ (A):  
  • Gate Charge Typ (nC):  
  • Short Circuit Withstand (µs):  
  • EAS Typ (mJ):  
  • PD Max (W):  
  • Co-Packaged Diode:  
  • Package Type: TO-247 4-LEAD, THIN LEADS 
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