FGH40T65SHDF: IGBT, 650V, 40A Field Stop Trench

具体说明: Using novel field stop IGBT technology, Fairchild’...
  • Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer superior conduction andswitching performance and easy parallel operation. This device is well suited for the resonant or soft switching application suchas induction heating and MWO.
  • 特性
  • Maximum Junction Temperature : TJ = 175°C
  • Positive Temperaure Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) = 1.45 V ( Typ.) @ IC = 40 A
  • 100% of the Parts tested for ILM(1)
  • High Input Impedance
  • Fast Switching
  • Tighten Parameter Distribution
  • RoHS Compliant
  • 技术文档及设计资源
    供货情况和样品
    FGH40T65SHDF-F155
  • 状况: Active
  • Compliance: Pb-free Halide free 
  • 具体说明: IGBT, 650V, 40A Field Stop Trench
  • 封装 类型: TO-247-3
  • 封装 外形: 340CH
  • MSL: NA
  • 容器 类型: TUBE
  • 容器 数量: 450
  • 库存

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Digikey:<1K
  • Specifications
  • V(BR)CES Typ (V): 650 
  • IC Max (A):  
  • VCE(sat) Typ (V):  
  • VF Typ (V): 1.5 
  • Eoff Typ (mJ): 0.44 
  • Eon Typ (mJ): 1.22 
  • Trr Typ (ns):  
  • Irr Typ (A):
  • Gate Charge Typ (nC): 68 
  • Short Circuit Withstand (µs):
  • EAS Typ (mJ):
  • PD Max (W): 268 
  • Co-Packaged Diode:  
  • Package Type: TO-247-3 
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