FDMS3602AS: Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 25V

具体说明: This device includes two specialized N-Channel MOS...
  • This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
  • 特性
  • Q1: N-Channel
    Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A
    Max rDS(on) = 8.5 mΩ at VGS = 4.5 V, ID = 14 A
  • Q2: N-Channel
    Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 26 A
    Max rDS(on) = 3.4 mΩ at VGS = 4.5 V, ID = 22 A
  • Low inductance packaging shortens rise/fall times, resulting in lower switching losses
  • MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
  • RoHS Compliant
  • 应用
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    FDMS3602AS
  • 状况: Active
  • Compliance: Pb-free Halide free 
  • 具体说明: Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 25V
  • 封装 类型: PQFN-8
  • 封装 外形: 483AJ
  • MSL: 1
  • 容器 类型: REEL
  • 容器 数量: 3000
  • 库存

  • Market Leadtime (weeks):Contact Factory
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  • ON Semiconductor:3,000
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Dual 
  • V(BR)DSS Min (V): 25 
  • VGS Max (V): 20 
  • VGS(th) Max (V):
  • ID Max (A): Q1: 15.0, Q2: 26.0 
  • PD Max (W): Q1:2.2, Q2: 2.5 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): Q1: 8.5, Q2: 3.4 
  • RDS(on) Max @ VGS = 10 V (mΩ): Q1: 5.6, Q2: 2.2 
  • Qg Typ @ VGS = 4.5 V (nC): 22 
  • Qg Typ @ VGS = 10 V (nC): 21 
  • Ciss Typ (pF): 3260 
  • Package Type: PQFN-8 
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