Silicon Carbide (SiC) Diodes | FFSH20120A

碳化硅肖基特二极管

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碳化硅 (SiC) 肖特基二极管使用全新技术，能够提供卓越的开关性能，且比硅具有更高的可靠性。碳化硅的无逆向恢复电流、温度无关开关特性和卓越的热性能，使其成为下一代功率半导体产品。系统优点包括最高能效、更快的运行频率、提高的功率密度、降低的 EMI，以及减小的系统尺寸和成本。

  • UPS
  • Solar Inverter
  • 最大结温 175 °C
  • 雪崩额定值 200 mJ
  • 高浪涌电流能力
  • 正温度系数
  • 易于并联
  • 无反向恢复/无正向恢复

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FFSH20120A

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TO-247-2

340CL

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0

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450

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D1

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20

1.75

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200

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