Silicon Carbide (SiC) Diodes | FFSD10120A

碳化硅肖特基二极管

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碳化硅肖特基二极管使用全新技术，相比硅材，可提供卓越的开关性能和更高的可靠性。 无反向恢复电流、随温度变化的开关特性，以及出色的热性能使碳化硅成为新一代功率半导体。 系统优势包括效率最高、运行频率更快、功率密度增加、电磁干扰减少、以及系统大小和成本降低。

  • Industrial
  • UPS / ESS
  • Solar
  • EV Charger
  • 最大结温 175 °C
  • 雪崩额定值 100 mJ
  • 高浪涌电流能力
  • 正温度系数
  • 易于并联

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FFSD10120A

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CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

Y

D1

Single

1200

10

1.75

90

200

$2.6397

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