The NXH003P120M3F2PTNG is a power module containing 3 mohm / 1200 V SiC MOSFET half−bridge and a thermistor with Si3N4 DBC in an F2 package. The SiC MOSFET switches use M3S technology and are driven with 18V-20V gate drive.
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NXH003P120M3F2PTNG
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Pb
A
H
P
PIM36 56.70x42.50x12.00
NA
0
BTRAY
20
F
Half-Bridge
1200
3
EV Charging, Energy Infrastructure
$240.5155
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