NIS5132: 12 V Electronic Fuse, eFuse

具体说明: The NIS5132 is a cost effective, resettable fuse w...
  • The NIS5132 is a cost effective, resettable fuse which can greatly enhance the reliability of a hard drive or other circuit from both catastrophic and shutdown failures. It is designed to buffer the load device from excessive input voltage which can damage sensitive circuits. It also includes an overvoltage clamp circuit that limits the output voltage during transients but does not shut the unit down, thereby allowing the load circuit to continue operation.
  • 特性
  • Integrated Power Device
  • Internal Latching Thermally Protected
  • No External Current Shunt Required
  • 9V to 18V Input Range
  • Internal Charge Pump
  • Internal Undervoltage Lockout Circuit
  • Internal Overvoltage Clamp
  • ESD Ratings: Human Body Model (HBM); 1500V, Machine Model (MM); 200V
  • These are Pb-Free Devices
  • Auto Retry Option
  • 44 mohm Typical
  • 应用
  • Mother Board Power Management
  • 终端产品
  • Hard Drives
  • 技术文档及设计资源
    产品更改通知
    供货情况和样品
    NIS5132MN1TXG
  • 状况: Active
  • Compliance: Pb-free Halide free 
  • 具体说明: 12 V Electronic Fuse, eFuse
  • 封装 类型: DFN-10
  • 封装 外形: 485C
  • MSL: 1
  • 容器 类型: REEL
  • 容器 数量: 3000
  • 库存

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Avnet:>50K
  • Digikey:>10K
  • ON Semiconductor:36,000
  • NIS5132MN2TXG
  • 状况: Active
  • Compliance: Pb-free Halide free 
  • 具体说明: 12 V Electronic Fuse, eFuse
  • 封装 类型: DFN-10
  • 封装 外形: 485C
  • MSL: 1
  • 容器 类型: REEL
  • 容器 数量: 3000
  • 库存

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Digikey:>1K
  • FutureElectronics:>1K
  • Newark:<1K
  • ON Semiconductor:186,000
  • NIS5132MN3TXG
  • 状况: Active
  • Compliance: Pb-free Halide free 
  • 具体说明: 12 V Electronic Fuse, eFuse
  • 封装 类型: DFN-10
  • 封装 外形: 485C
  • MSL: 1
  • 容器 类型: REEL
  • 容器 数量: 3000
  • 库存

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Digikey:<1K
  • ON Semiconductor:21,000
  • Specifications
  • Type: Latch Off  Auto-Retry 
  • VI Max (V): 18 
  • rDS(on) Max (mΩ): 55 
  • TSD Typ (°C): 175 
  • Thyst Typ (°C): 45 
  • Package Type: DFN-10 
  • ON Semiconductor 完整版網站