NGTB30N60IHLWG: IGBT, Field Stop (FS), 30 A, 600 V

具体说明: This Insulated Gate Bipolar Transistor (IGBT) feat...
  • This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in damanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage.
  • 特性
  • Low Saturation Voltage using Trench with Fieldstop Technology - Low Conduction Loss
  • Low Switching Loss - Reduces System Power Dissipation
  • 应用
  • Half Bridge IH
  • 终端产品
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    NGTB30N60IHLWG
  • 状况: Active
  • Compliance: Pb-free Halide free 
  • 具体说明: IGBT, Field Stop (FS), 30 A, 600 V
  • 封装 类型: TO-247-3
  • 封装 外形: 340AL
  • MSL: NA
  • 容器 类型: TUBE
  • 容器 数量: 30
  • 库存

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • ON Semiconductor:300
  • Specifications
  • V(BR)CES Typ (V): 600 
  • IC Max (A): 30 
  • VCE(sat) Typ (V): 1.8 
  • VF Typ (V): 1.2 
  • Eoff Typ (mJ): 0.28 
  • Eon Typ (mJ):  
  • Trr Typ (ns): 400 
  • Irr Typ (A): 23 
  • Gate Charge Typ (nC): 130 
  • Short Circuit Withstand (µs):  
  • EAS Typ (mJ):  
  • PD Max (W): 250 
  • Co-Packaged Diode: Yes 
  • Package Type: TO-247-3 
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