NGTB20N135IHR: IGBT 1350V 20A FS2-RC Induction Heating

具体说明: This Insulated Gate Bipolar Transistor (IGBT) feat...
  • This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS)Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications.
  • 特性
  • Optimized fo Low Case Temperature in IH Cooker Applications - Low Switching Loss Reduces System Power Dissipation
  • Extremely Efficient Trench with Fieldstop Technology
  • 1350V Breakdown Voltage
  • Reliable and Cost Effective Single Die Solution
  • 应用
  • Inductive Heating
  • Consumer Appliances
  • Soft Switching
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    NGTB20N135IHRWG
  • 状况: Active
  • Compliance: Pb-free Halide free 
  • 具体说明: IGBT 1350V 20A FS2-RC Induction Heating
  • 封装 类型: TO-247-3
  • 封装 外形: 340AL
  • MSL: NA
  • 容器 类型: TUBE
  • 容器 数量: 30
  • 库存

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Digikey:<1K
  • Mouser:<1K
  • ON Semiconductor:3,540
  • Specifications
  • V(BR)CES Typ (V): 1350 
  • IC Max (A): 20 
  • VCE(sat) Typ (V): 2.2 
  • VF Typ (V): 1.8 
  • Eoff Typ (mJ): 0.6 
  • Eon Typ (mJ):  
  • Trr Typ (ns):  
  • Irr Typ (A):  
  • Gate Charge Typ (nC): 234 
  • Short Circuit Withstand (µs):  
  • EAS Typ (mJ):  
  • PD Max (W): 394 
  • Co-Packaged Diode: Yes 
  • Package Type: TO-247-3 
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