MJE5850: 8.0 A, 300 V PNP Bipolar Power Transistor

具体说明: The MJE5850, MJE5851 and the MJE5852 transistors a...
  • The MJE5850, MJE5851 and the MJE5852 transistors are designed for high voltage, high speed, power switching in inductive circuits where fall time is critical.
  • 特性
  • Pb-Free Packages are Available
  • 应用
  • Switching Regulators
  • Inverters
  • Solenoid and Relay Drivers
  • Motor Controls
  • Deflection Circuits
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    MJE5850G
  • 状况: Active
  • Compliance: Pb-free 
  • 具体说明: 8.0 A, 300 V PNP Bipolar Power Transistor
  • 封装 类型: TO-220-3
  • 封装 外形: 221A-09
  • MSL: NA
  • 容器 类型: TUBE
  • 容器 数量: 50
  • 库存

  • Market Leadtime (weeks):17 to 20
  • Arrow:0
  • Digikey:<1K
  • Mouser:<1K
  • MJE5850
  • 状况: Last Shipments
  • Compliance: 
  • 具体说明: 8.0 A, 300 V PNP Bipolar Power Transistor
  • 封装 类型: TO-220-3
  • 封装 外形: 221A-09
  • MSL: NA
  • 容器 类型: TUBE
  • 容器 数量: 50
  • 封装
    Specifications
  • Polarity: PNP 
  • Type: General Purpose 
  • VCE(sat) Max (V):
  • IC Cont. (A):
  • VCEO Min (V): 300 
  • VCBO (V):
  • VEBO (V):
  • VBE(sat) (V): 1.5 
  • VBE(on) (V):
  • hFE Min: 15 
  • hFE Max:
  • fT Min (MHz):
  • PTM Max (W): 80 
  • Package Type: TO-220-3 
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