FDB12N50TM: Power MOSFET, N-Channel, UniFETTM, 500 V, 11.5 A, 650 mΩ, D2PAK

具体说明: UniFETTM MOSFET is Fairchild Semiconduc...
  • UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
  • 特性
  • RDS(on) = 550mΩ ( Typ.)@ VGS = 10V, ID = 6A
  • Low gate charge ( Typ. 22nC)
  • Low Crss ( Typ. 11pF)
  • 100% avalanche tested
  • RoHS compliant
  • 应用
  • This product is general usage and suitable for many different applications.
  • 技术文档及设计资源
    供货情况和样品
    FDB12N50TM
  • 状况: Active
  • Compliance: Pb-free Halide free 
  • 具体说明: Power MOSFET, N-Channel, UniFETTM, 500 V, 11.5 A, 650 mΩ, D2PAK
  • 封装 类型: D2PAK-3 / TO-263-2
  • 封装 外形: 418AJ
  • MSL: 1
  • 容器 类型: REEL
  • 容器 数量: 800
  • 库存

  • Market Leadtime (weeks):8 to 12
  • Arrow:0
  • Digikey:<1K
  • Mouser:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 500 
  • VGS Max (V): ±30 
  • VGS(th) Max (V):
  • ID Max (A): 11.5 
  • PD Max (W): 165 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 650 
  • Qg Typ @ VGS = 4.5 V (nC): 24 
  • Qg Typ @ VGS = 10 V (nC): 22 
  • Ciss Typ (pF): 985 
  • Package Type: D2PAK-3 / TO-263-2 
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