2N3055: 15 A, 60 V NPN Bipolar Power Transistor

具体说明: The PNP Bipolar Power Transistor is designed for u...
  • The PNP Bipolar Power Transistor is designed for use in high power amplifier and switching amplifier applications. The 2N3055 (NPN) and MJ2955 (PNP)are complementary devices.
  • 特性
  • DC Current Gain - hFE = 20-70 @ IC = 4 Adc
  • Collector-Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
  • Excellent Safe Operating Area
  • Pb-Free Packages are Available
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    2N3055G
  • 状况: Active
  • Compliance: Pb-free 
  • 具体说明: 15 A, 60 V NPN Bipolar Power Transistor
  • 封装 类型: TO-204-2
  • 封装 外形: 1-07
  • MSL: NA
  • 容器 类型: FTRAY
  • 容器 数量: 100
  • 库存

  • Market Leadtime (weeks):2 to 4
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  • 封装
    Specifications
  • Polarity: NPN 
  • Type: General Purpose 
  • VCE(sat) Max (V): 1.1 
  • IC Cont. (A): 15 
  • VCEO Min (V): 60 
  • VCBO (V): 100 
  • VEBO (V):
  • VBE(sat) (V):
  • VBE(on) (V): 1.5 
  • hFE Min: 20 
  • hFE Max: 70 
  • fT Min (MHz): 2.5 
  • PTM Max (W): 115 
  • Package Type: TO-204-2 
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